? semiconductor components industries, llc, 2009 march, 2009 ? rev. 2 1 publication order number: NTJD4158C/d NTJD4158C small signal mosfet 30 v/ ? 20 v, +0.25/ ? 0.88 a, complementary, sc ? 88 features ? leading 20 v trench for low r ds(on) performance ? esd protected gate ? sc ? 88 package for small footprint (2 x 2 mm) ? this is a pb ? free device applications ? dc ? dc conversion ? load/power management ? load switch ? cell phones, mp3s, digital cameras, pdas maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain ? to ? source voltage n ? ch v dss 30 v p ? ch ? 20 gate ? to ? source voltage n ? ch v gs 20 v p ? ch 12 n ? channel continuous drain current (note 1) steady state t a = 25 c i d 0.25 a t a = 85 c 0.18 p ? channel continuous drain current (note 1) steady state t a = 25 c ? 0.88 t a = 85 c ? 0.63 power dissipation (note 1) steady state t a = 25 c p d 0.27 w pulsed drain cur- rent n ? ch tp = 10 s i dm 0.5 a p ? ch ? 3.0 operating junction and storage temperature t j , t stg ? 55 to 150 c source current (body diode) n ? ch i s 0.25 a p ? ch ? 0.48 lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c thermal resistance ratings parameter symbol max unit junction ? to ? ambient ? steady state (note 1) r ja 460 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). (top view) http://onsemi.com d 1 g 2 s 2 s 1 g 1 d 2 6 5 4 1 2 3 n ? ch 30 v 1.0 @ 4.5 v r ds(on) typ 0.25 a i d max v (br)dss 1.5 @ 2.5 v 215 m @ ? 4.5 v p ? ch ? 20 v 345 m @ ? 2.5 v ? 0.88 a sc ? 88 (sot ? 363) (6 ? leads) device package shipping ? ordering information NTJD4158Ct1g sc ? 88 (pb ? free) 3000 tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. tcd m 1 6 1 marking diagram & pin assignment sc ? 88 (sot ? 363) case 419b style 26 tcd = specific device code m = date code = pb ? free package (note: microdot may be in either location) s1 g1 d2 d1 g2 s2
NTJD4158C http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol n/p test condition min typ max unit off characteristics (note 3) drain ? to ? source breakdown voltage v (br)dss n v gs = 0 v i d = 250 a 30 v p i d = ? 250 a ? 20 drain ? to ? source breakdown voltage temperature coefficient v (br)dss / t j n 33 mv/ c p ? 9.0 zero gate voltage drain current i dss n v gs = 0 v, v ds = 30 v t j = 25 c 1.0 a p v gs = 0 v, v ds = ? 16 v 1.0 n v gs = 0 v, v ds = 30 v t j = 125 c 0.5 p v gs = 0 v, v ds = ? 16 v 0.5 gate ? to ? source leakage current i gss n v ds = 0 v, v gs = 10 v 1.0 a p v ds = 0 v, v gs = ? 4.5 v 1.0 on characteristics (note 2) gate threshold voltage v gs(th) n v gs = v ds i d = 100 a 0.8 1.2 1.5 v p i d = ? 250 a ? 0.45 negative gate threshold temperature coefficient v gs(th) / t j n 3.2 mv/ c p ? 2.7 drain ? to ? source on resistance r ds(on) n v gs = 4.5 v, i d = 10 ma 1.0 1.5 p v gs = ? 4.5 v, i d = ? 0.88 a 0.215 0.260 n v gs = 2.5 v, i d = 10 ma 1.5 2.5 p v gs = ? 2.5 v, i d = ? 0.71 a 0.345 0.500 forward transconductance g fs n v ds = 3.0 v, i d = 10 ma 0.08 s p v ds = ? 10 v, i d = ? 0.88 a 3.0 charges, capacitances and gate resistance input capacitance c iss n f = 1 mhz, v gs = 0 v v ds = 5.0 v 20 33 pf p v ds = ? 20 v 155 225 output capacitance c oss n v ds = 5.0 v 19 32 p v ds = ? 20 v 25 40 reverse transfer capacitance c rss n v ds = 5.0 v 7.25 12 p v ds = ? 20 v 18 30 total gate charge q g(tot) n v gs = 5.0 v, v ds = 24 v, i d = 0.1 a 0.9 1.5 nc p v gs = ? 4.5 v, v ds = ? 10 v, i d = ? 0.88 a 2.2 3.5 threshold gate charge q g(th) n v gs = 5.0 v, v ds = 24 v, i d = 0.1 a 0.2 p v gs = ? 4.5 v, v ds = ? 10 v, i d = ? 0.88 a 0.2 gate ? to ? source charge q gs n v gs = 5.0 v, v ds = 24 v, i d = 0.1 a 0.3 p v gs = ? 4.5 v, v ds = ? 10 v, i d = ? 0.88 a 0.5 gate ? to ? drain charge q gd n v gs = 5.0 v, v ds = 24 v, i d = 0.1 a 0.2 p v gs = ? 4.5 v, v ds = ? 10 v, i d = ? 0.88 a 0.65 switching characteristics (note 3) turn ? on delay time t d(on) n v gs = 4.5 v, v dd = 5.0 v, i d = 250 ma, r g = 50 15 ns rise time t r 66 turn ? off delay time t d(off) 56 fall time t f 78 turn ? on delay time t d(on) p v gs = ? 4.5 v, v dd = ? 10 v, i d = ? 0.5 a, r g = 20 5.8 rise time t r 6.5 turn ? off delay time t d(off) 13.5 fall time t f 3.5 drain ? source diode characteristics forward diode voltage v sd n v gs = 0 v, t j = 25 c i s = 10 ma 0.65 0.7 v p i s = ? 0.48 a ? 0.8 ? 1.2 n v gs = 0 v, t j = 125 c i s = 10 ma 0.45 p i s = ? 0.48 a ? 0.66 reverse recovery time t rr n v gs = 0 v, d is /d t = 8.0 a/ s i s = 10 ma 12.4 ns p v gs = 0 v, d is /d t = 100 a/ s i s = ? 0.48 ma tbd 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures.
NTJD4158C http://onsemi.com 3 typical n ? channel performance curves (t j = 25 c unless otherwise noted) 0 0.2 0.1 1.25 0.25 v ds , drain ? to ? source voltage (volts) i d, drain current (amps) 0.06 0.02 0 figure 1. on ? region characteristics 1.25 2.25 1.75 2.5 0.2 0.15 0.05 1.5 0 1 figure 2. transfer characteristics v gs , gate ? to ? source voltage (volts) 0.5 0.4 figure 3. on ? resistance vs. drain current and temperature i d, drain current (amps) r ds(on), drain ? to ? source resistance ( ) i d, drain current (amps) figure 4. on ? resistance vs. drain current and gate voltage ? 50 0 ? 25 25 1.5 1.25 1 0.75 0 50 125 100 figure 5. on ? resistance variation with temperature t j , junction temperature ( c) t j = 25 c 1.3 t j = ? 55 c t j = 125 c 75 150 i d = 0.01 a v gs = 4.5 v r ds(on), drain ? to ? source resistance (normalized) 0.5 25 c 2 1.8 v 0.005 0.205 figure 6. drain ? to ? source leakage current vs. voltage 2 v 2.4 v 1 1.5 v ds = 5 v 0.7 v gs = 2.6 v v gs = 10 v to 2.8 v 0.04 0.08 0.12 0.1 2 t j = 125 c v gs = 4.5 v t j = ? 55 c t j = 25 c 1.0 1.75 030 v ds, drain ? to ? source voltage (volts) 10 i dss , leakage (na) 1000 100 10 15 t j = 150 c t j = 125 c 5 v gs = 0 v 0.055 0.105 0.155 0.5 0 i d, drain current (amps) r ds(on), drain ? to ? source resistance ( ) 2.5 0.005 0.205 1.5 v gs = 4 v t j = 25 c 2.0 0.055 0.105 0.155 v gs = 2.5 v 0.5 0.25 20 25 0.18 0.16 0.14 2.2 v 0.75 0.6 0.8 0.9 1.1 1.2 1.0
NTJD4158C http://onsemi.com 4 typical n ? channel performance curves (t j = 25 c unless otherwise noted) v ds = 0 v v gs = 0 v 0 10 10 30 20 10 0 25 gate ? to ? source or drain ? to ? source voltage (volts) c, capacitance (pf) 0 0.2 4 1 0 q g , total gate charge (nc) v gs, gate ? to ? source voltage (volts) t j = 25 c c oss c iss c rss i d = 0.1 a t j = 25 c 50 0.6 2 3 q gd q gs 5 40 5 v gs v ds 15 0.4 1 0.65 0.02 0 v sd , source ? to ? drain voltage (volts) i s , source current (amps) v gs = 0 v t j = 25 c 0.7 0.75 0.1 figure 7. capacitance variation figure 8. gate ? to ? source voltage vs. total gate charge figure 9. resistive switching time variation vs. gate resistance 5 0.8 q g 0.5 0.6 0.55 0.04 0.06 0.08 20 c rss c iss figure 10. diode forward voltage vs. current 10 1 100 10 100 r g , gate resistance (ohms) t, time (ns) v dd = 5.0 v i d = 0.25 a v gs = 4.5 v t d(off) t d(on) t f t r 1000
NTJD4158C http://onsemi.com 5 typical p ? channel performance curves (t j = 25 c unless otherwise noted) ? 2 v 125 c 0 1 0.75 1.2 0.8 ? v ds , drain ? to ? source voltage (volts) ? i d, drain current (amps) 0.25 0 0.4 figure 1. on ? region characteristics 0 1 1.5 12 0.8 0.7 0.1 0.5 0 3.5 figure 2. transfer characteristics ? v gs , gate ? to ? source voltage (volts) 15 100 10 figure 3. on ? resistance vs. drain current and temperature ? v ds , drain ? to ? source voltage (volts) ? i dss, leakage current (na) ? i d, drain current (amps) 01 0.1 figure 4. on ? resistance vs. drain current and gate voltage ? i d, drain current (amps) ? 50 0 ? 25 25 1.0 0.8 0.6 0.4 0 50 125 100 figure 5. on ? resistance variation with temperature t j , junction temperature ( c) t j = 25 c 10000 5 t j = ? 55 c v gs = 0 v 0.3 75 150 t j = 25 c i d = ? 0.88 a v gs = ? 4.5 v r ds(on), drain ? to ? source resistance (normalized) 25 c r ds(on), drain ? to ? source resistance ( ) 2.0 v gs = ? 4.5 v ? 1 v 020 ? 1.25 v ? 1.5 v ? 1.75 v 0.25 0.2 1.6 2 1000 0.25 0.5 0.75 0.15 v gs = ? 4.5, ? 3.5 & ? 2.5 v figure 6. drain ? to ? source leakage current vs. voltage 0.4 1 0.2 ? i d, drain current (amps) 0.5 0 r ds(on), drain ? to ? source resistance ( ) v gs = ? 4.5 v 0.1 0.4 v gs = ? 2.5 v 0.7 0.9 0.3 0.5 0.9 10 t j = 125 c t j = ? 55 c 0.5 0.8 0.6 0.2 t j = 25 c 1.8 1.6 1.4 1.2 t j = 125 c t j = 150 c 2.5 3 0.2 0.3 0.4 0.5 0.6 v ds ? 20 v
NTJD4158C http://onsemi.com 6 typical p ? channel performance curves (t j = 25 c unless otherwise noted) v ds = 0 v v gs = 0 v 0 10 10 350 150 100 50 0 20 gate ? to ? source or drain ? to ? source voltage (volts) c, capacitance (pf) 0 4 1 0 q g , total gate charge (nc) ? v gs, gate ? to ? source voltage (volts) t j = 25 c c oss c iss c rss i d = ? 0.88 a t j = 25 c 250 1.2 0.8 2 3 q2 q1 10 1 10 1 100 r g , gate resistance (ohms) t, time (ns) v dd = ? 10 v i d = ? 0.8 a v gs = ? 4.5 v 5 200 5 t d(off) t d(on) t f t r v gs v ds 15 0.4 0.6 0 ? v sd , source ? to ? drain voltage (volts) ? i s , source current (amps) v gs = 0 v t j = 25 c 0.7 0.1 0 0.3 0.5 figure 7. capacitance variation figure 8. gate ? to ? source voltage vs. total gate charge figure 9. resistive switching time variation vs. gate resistance figure 10. diode forward voltage vs. current 5 300 2 1.6 qt 100 0.2 0.5 0.3 0.1 0.2 0.4 0.4
NTJD4158C http://onsemi.com 7 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b ? 01 obsolete, new standard 419b ? 02. e 0.2 (0.008) mm 123 d e a1 a a3 c l 654 ? e ? b 6 pl sc ? 88/sc70 ? 6/sot ? 363 case 419b ? 02 issue w dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086 style 26: pin 1. source 1 2. gate 1 3. drain 2 4. source 2 5. gate 2 6. drain 1 mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?t ypicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license un der its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended f or surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in a ny manner. NTJD4158C/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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